292 7.6  High-Throughput Techniques

objects, for example, from attaching smaller objects together in a modular fashion and util­

izing origami methods to fold several smaller printed sheetlike structures together to gen­

erate complex 3D shapes.

Worked Case Example 7.1: Microfabrication

A silicon substrate was spin-​coated with an SU-​8 photoresist by spinning at 3000 rpm in

order to ultimately generate a layer of silicon oxide of the same thickness as the sacrificial

photoresist material.

a

To generate a 0.5 μm thick layer of silicon oxide, how many minutes must the spin-​

coating of the SU-​8 proceed for?

In a subsequent step after the removal of the photoresist and deposition of the

silicon oxide, silicon oxide was coated with a 10 nm thick layer of gold for a surface

plasmon resonance application, employing evaporation deposition using a length of

gold wire evaporated at a distance of 5 cm away from the silicon substrate.

b

If the gold wire has a diameter of 50 μm and is wound tightly onto an electric heating

filament under a high vacuum, which melts and vaporizes the gold completely,

explain with reasoning how many centimeters of wire are needed to be used, stating

any assumptions you make.

(Assume that the density and dynamic viscosity of the SU-​8 used are 1.219 g cm−3 and

0.0045 Pa · s.)

Answers

a

Assuming a high time approximation, we can rearrange Equation 7.7 to generate

the time t required for a given photoresist thickness h of such that

t

h

=

3

4

2

2

η

ρω

Thus,

t =

×

×

×

×

×

(3

0.0045) (4

(1.219

10 ) kg m

(3000/60

2 )

rad

3

3

2

2

/

π

s

(20

10

) m)

112 s

1.9 min

2

6 2

×

×

=

=

b

If a mass m of gold vaporizes isotropically, then the mass flux per unit area at a

distance d from the point of vaporization (here 5 cm) will be m/​4πd2. Thus, over

a small area of the substrate δA, the mass of gold vapor deposited assuming it

solidifies soon after contact will be

δ

δ

π

ρ δ

δ

m

A m

d

A

Z

Au

=

=

/4

2

where the density of gold is ρAu, and the thickness of the deposited gold on the

silicon oxide substrate is δz, which is 10 nm here. Thus,

δ

π

ρ

z

m

d

Au

=

/4

2

But the mass of the gold is given by

m

rAU

Au

= /4

2

π

ρ

where l is the length of gold wire used of radius rAu.